Document
STK0380F
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
Drain-source breakdown voltage: BVDSS=800V (Min.) Low gate charge: Qg=14.2nC (Typ.) Low drain-source On resistance: RDS(on)=3.5Ω (Typ.) RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
Marking
Package
STK0380F
STK0380
TO-220F-3L
GDS
TO-220F-3L
Marking Information
SMN 03T80
YWAWUAKUK SGTFKΔY0YM3MD8DD0 D SDB20D45
Column 1 : Manufacturer Column 2 : Production Information e.g.) GFYMDD
-. G : Option Code (H : Halogen Free) -. F : Factory Management Code -. YMDD : Date Code (Year, Month, Date)
Column 3 : Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) * Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperat.