AOD3N40
AOD3N40
400V,2.6A N-Channel MOSFET
General Description
Product Summary
The AOD3N40 has been fabricated using an advan...
Description
AOD3N40
400V,2.6A N-Channel MOSFET
General Description
Product Summary
The AOD3N40 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested! 100% Rg Tested!
500V@150℃ 2.6A < 3.1Ω
Top View
TO252 DPAK
Bottom View
D D
S G
G S
D
G S
AOD3N40
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C
CurrentB
TC=100°C
Pulsed Drain Current C
Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy H
Peak diode recovery dv/dt
VGS
ID
IDM (<80µs) IDM (<20µs) IAR EAR EAS dv/dt
TC=25°C Power Dissipation...
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