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MMBTA64 Dataheets PDF



Part Number MMBTA64
Manufacturers JCET
Logo JCET
Description PNP Transistor
Datasheet MMBTA64 DatasheetMMBTA64 Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA64 TRANSISTOR (PNP) SOT–23 FEATURES  For Applications Requiring High Current Gain MARKING:2V MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -30 VCEO Collector-Emitter Voltage -30 VEBO Emitter-Base Voltage -10 IC Collector Current -800 PC Collector Power Dissipation 300 RΘJA Thermal Resistance From Junction To Ambient 416 Tj Juncti.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA64 TRANSISTOR (PNP) SOT–23 FEATURES  For Applications Requiring High Current Gain MARKING:2V MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -30 VCEO Collector-Emitter Voltage -30 VEBO Emitter-Base Voltage -10 IC Collector Current -800 PC Collector Power Dissipation 300 RΘJA Thermal Resistance From Junction To Ambient 416 Tj Junction Temperature 150 Tstg Storage Temperature -55~+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -10 V Collector cut-off current ICBO VCB=-30V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-10V, IC=0 -0.1 .


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