Document
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBTA64 TRANSISTOR (PNP)
SOT–23
FEATURES For Applications Requiring High Current Gain
MARKING:2V
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-30
VCEO Collector-Emitter Voltage
-30
VEBO Emitter-Base Voltage
-10
IC Collector Current
-800
PC Collector Power Dissipation
300
RΘJA Thermal Resistance From Junction To Ambient
416
Tj Junction Temperature
150
Tstg Storage Temperature
-55~+150
Unit V V V mA
mW ℃/W
℃ ℃
1. BASE 2. EMITTER 3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100µA, IE=0
-30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA, IC=0
-10
V
Collector cut-off current
ICBO
VCB=-30V, IE=0
-0.1 µA
Emitter cut-off current
IEBO VEB=-10V, IC=0
-0.1 .