MJD127

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD127 TRANSISTOR (PNP) FEATURES High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -100 -100 -5 -8 1.5 150 -55-150 Unit V V V A W ℃ ℃ TO-251-3L 1. BASE 2. COLLECTOR 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=-30mA,IB=0 Emitter-base breakdown voltage V(BR)EBO IE=-10mA,IC=0 Collector cut-off current ICBO VCB=-100V,IE=0 Collector-emitter cut-off current ICEO =VCE =-50V,IB 0 Emitter cut-off current I...