OptiMOSTM Power-MOSFET
Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like di...
OptiMOSTM Power-MOSFET
Features Optimized for high performance Buck converter Monolithic integrated
Schottky like diode Very low on-resistance R DS(on) @ V GS=4.5 V 100% avalanche tested N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21
BSC014NE2LSI
Product Summary VDS RDS(on),max ID QOSS QG(0V..10V)
25 V 1.4 mW 100 A 25 nC 39 nC
PG-TDSON-8
Type BSC014NE2LSI
Package PG-TDSON-8
Marking 014NE2LI
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C
100 A 100 100
V GS=4.5 V, T C=100 °C
94
V GS=10 V, T A=25 °C, R thJA=50 K/W2)
33
Pulsed drain current3)
I D,pulse T C=25 °C
400
Avalanche current, single pulse4)
I AS
T C=25 °C
50
Avalanche energy, single pulse
E AS I D=50 A, R GS=25 W
50 mJ
Gate sou...
