Document
CD2315
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CD2315 is designed for broadband amplifier applications in commercial and amateur communication equipment.
PACKAGE STYLE .380 4L FLG
B .112 x 45° A
2
1 2
C D E
Ø.125 NOM. FULL R J .125
FEATURES:
• PG = 18 dB min. at 75 W/30 MHz • IMD3 = -30 dBc max. at 75 W (PEP) • Omnigold™ Metalization System
DIM F
3
G
H I
MINIMUM
inches / mm
MAXIMUM
inches / mm
MAXIMUM RATINGS
IC VCB VCE PDISS TJ TSTG θJC 10 A 60 V 35 V 140 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.05 °C/W
A B C D E F G H I J
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64
.230 / 5.84
.730 / 18.54 .980 / 24.89 .385 / 9.78
.004 / 0.10 .085 / 2.16 .160 / 4.06
.006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11
.240 / 6.10
.255 / 6.48
1 = Collector
2 = Emitter
3 = Base
CHARACTERISTICS
SYMBOL
BVCEO BVCER BVEBO ICES hFE Cob GPE IMD3 IC = 50 mA IC = 50 mA IE = 10 mA VE = 28 V VCE = 5.0 V VCB = 28 V VCE = 25 V
TC = 25 °C
NONETEST CONDITIONS
RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
35 60 4.0 5
UNITS
V V V mA --pF dB
IC = 1.0 A f = 1.0 MHz ICQ = 3.2 A Vision = -8 dB Side Band = -16 dB f = 225 MHz Snd. = -7 dB
10
100 80
13.5
14.5 -55
PREF = 16 W
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
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