JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
BCV47 TRANSISTOR (NPN)
SOT–2...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate
Transistors
BCV47
TRANSISTOR (
NPN)
SOT–23
FEATURES High Collector Current High Current Gain MARKING:FG
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
80
VCEO Collector-Emitter Voltage
60
VEBO Emitter-Base Voltage
10
IC Collector Current
500
PC Collector Power Dissipation
300
RΘJA Thermal Resistance From Junction To Ambient
416
Tj Junction Temperature Tstg Storage Temperature
150 -55～+150
Unit V V V mA
mW ℃/W
℃ ℃
1. BASE 2. EMITTER 3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=100µA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=10mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=10µA, IC=0
Collector cut-off current
ICBO VCB=60V, IE=0
Emitter cut-off current
IEBO VEB=4V, IC=0
hFE(1)...
