BT15T120ANF

Silicon FS Planar IGBT BT15T120ANF ○R General Description： Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 1200V Trench FS-IGBT offers superior conduction and switching performances, high avalanche ruggedness. VCES IC Ptot （TC=25℃） VCE(SAT) 1200 15 186 1.95 V A W V Features： l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 1.95V @ IC = 15A and TC = 25°C l Extremely enhanced avalanche capability Applications： Power switch circuit of induction cooker(IH). Absolute Maximum Ratings （Tc= 25℃ unless otherwise specified）： Symbol Parameter VCES Collector-Emitter Voltage VGES Gate- Emitter Voltage IC ICMa1 IF Collector Current Collector Current @TC = 100 °C Pulsed Collector Current Diode Continuous Forward Current @TC = 100 °C IFM Diode Maximum Forward Current Power Dissipation @ TC = 25°C PD Power Dissipation @TC = 100 °C TJ，Tstg Operating Junction and Storage...