BT15N60A9F

Silicon FS Planar IGBT BT15N60A9F ○R General Description： Using HUAJING's proprietary Planar design and advanced FS technology, the 600V FSIGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. VCES IC Ptot TC=25℃） VCE(SAT) 600 15 25 2.1 V A W V Features： l FS Planar Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.1V @ IC = 15A and TC = 25°C l Extremely enhanced avalanche capability Applications： Aircondition、Welding、UPS… Absolute Maximum Ratings （Tc= 25℃ unless otherwise specified）： Symbol Parameter VCES Collector-Emitter Voltage VGES Gate- Emitter Voltage Collector Current IC Collector Current @TC = 100 °C IF Diode Continuous Forward Current @TC = 100 °C IFM Diode Maximum Forward Current Power Dissipation @ TC = 25°C PD Power Dissipation @TC = 100 °C TJ，Tstg Operating Junction and Storage Temperature Range Rating 600 ±20 30 15 10 ...