Dual N-Channel OptiMOS™ MOSFET
Features
Product Summary
• Dual N-channel OptiMOS™ MOSFET • Integrated monolithic Schot...
Dual N-Channel OptiMOS™ MOSFET
Features
Product Summary
Dual N-channel OptiMOS™ MOSFET Integrated monolithic
Schottky-like diode Optimized for high performance Buck converter Logic level (4.5V rated)
100% avalanche tested
VDS RDS(on),max
ID
VGS=10 V VGS=4.5 V
Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant
VPhase
Halogen-free according to IEC61249-2-22
BSC0924NDI
Q1 Q2 30 30 V 5 3.7 mW 7 5.2 40 40 A
Type BSC0924NDI
Package PG-TISON-8
Marking 0924NDI
Maximum ratings, at T j=25 °C, unless otherwise specified 2)
Parameter Continuous drain current
Pulsed drain current5) Avalanche energy, single pulse Gate source voltage Power dissipation
Symbol Conditions
ID
I D,pulse E AS V GS P tot
T C=70 °C, VGS=10V T A=25 °C, VGS=4.5V3) T A=70 °C, VGS=4.5V3) T A=25 °C, VGS=10V4) T C=70 °C Q1: I D=20 A, Q2: I D=20 A, R GS=25 W
T A=25 °C2)
T A=25 °C, minimum footprint3)
Value Q1 Q2 40 40 17 32 14 25 1...
