BD233

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD233/235/237 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Complement to Type BD234/236/238 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 5~10 watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD233 45 VCBO Collector-Base Voltage BD235 60 V BD237 100 BD233 45 VCEO Collector-Emitter Voltage BD235 60 V BD237 80 VCER Collector-Emitter Voltage(RBE= 1kΩ) BD233 45 BD235 60 V BD237 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 0.5 A 25 W 150 ℃ -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BD233/235/237 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 5 100 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD233 BD235 BD237 IC= 50mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.0A; IB= 0.1A VBE(on) ICBO IEBO Ba...