BF888

BF888 High Performance Bipolar NPN RF Transistor High transducer gain of typ. 14 dB @ 25 mA,6 GHz Low minimum noise figure of typ. 0.85 dB @ 6GHz High output compression of typ. 11 dBm @ 25 mA 3 4 2 1 Pb-free (RoHS compliant) package For a wide range of non-automotive applications - 2nd and 3rd LNA stage and mixer stage in LNB - 5.8 GHz analog/digital cordless phone - Satellite radio SDARS - WLAN, WiMAX, UWB ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BF888 Marking Pin Configuration RYs 1=B 2=E 3=C 4=E - - Package SOT343 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage VCEO TA = 25 °C TA = − 55 °C Collector-emitter voltage VCES Collector-base voltage VCBO Emitter-base voltage VEBO Collector current IC Base current Total power dissipation1) IB Ptot TS ≤ 89 °C Junction temperature TJ Ambient temperature TA Storage temperature TSt...