BD550

isc Silicon NPN Power Transistors DESCRIPTION High Power Dissipation ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 110V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as either driver or output unit applications in audio amplifier circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO VCER VCEO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage 130 V 130 V 110 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 150 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ BD550 · isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.5A VBE(on) Base-Emitter On Voltage ICER Collector Cutoff Current IC= 4A ;VCE= 4V VCE= 110V; RBE= 100Ω ICEO Collector Cutoff Current VCE= 95V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 4A ; VCE= 4V fT Current Gain-Bandwidth Product IC= 0.2A ; VCE= 10V BD550 MIN TYP. MAX UNIT 110 V 2 V 1.75 V 1 mA 5 mA 1 mA 15 75 5 MHz NOTICE： ISC reserves the rights to m...