Document
CYStech Electronics Corp.
Spec. No. : C708H8 Issued Date : 2016.05.23 Revised Date : 2016.11.07 Page No. : 1/ 10
Dual N-Channel Enhancement Mode Power MOSFET
MTB60A06DH8 BVDSS ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
ID@VGS=10V, TA=25°C
Features
• Low On Resistance
ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=5A
• Simple Drive Requirement
RDS(ON)@VGS=4.5V, ID=5A
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
60V 15A 9.5A 4.5A 3.6A 34mΩ(typ) 38mΩ(typ)
Equivalent Circuit
MTB60A06DH8
Outline
Pin 1
DFN5×6 Pin 1
G:Gate D:Drain S:Source
Ordering Information
Device MTB60A06DH8-0-T6-G
Package
DFN 5 ×6 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products Product name
MTB60A06DH8
.