MR44V064B

MR44V064B 64k(8,192-Word × 8-Bit) FeRAM (Ferroelectric Random Access Memory) I2C FEDR44V064B-01 Issue Date: Jan. 08, 2016 GENERAL DESCRIPTION The MR44V064B is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR44V064B is accessed using Two-wire Serial Interface ( I2C BUS ).Unlike SRAMs, this device, whose cells are nonvolatile, eliminates battery backup required to hold data. This device has no mechanisms of erasing and programming memory cells and blocks, such as those used for various EEPROMs. Therefore, the write cycle time can be equal to the read cycle time and the power consumption during a write can be reduced significantly. The MR44V064B can be used in various applications, because the device is guaranteed for the write/read tolerance of 1012 cycles per bit and the rewrite count can be extended significantly. FEATURES 8,192-word × 8-bit configuration I2C BUS Interfa...