Document
IPD80R1K4P7
MOSFET
800VCoolMOSªP7PowerTransistor
Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V superjunctiontechnologiesandcombinesbest-in-classperformancewith stateoftheartease-of-use,resultingfromInfineon’sover18years pioneeringsuperjunctiontechnologyinnovation.
Features
•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classDPAKRDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Fullyqualifiedacc.JEDECforIndustrialApplications •Fullyoptimizedportfolio
Benefits
•Best-in-classperformance •Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts •Easytodriveandtoparallel •BetterproductionyieldbyreducingESDrelatedfailures •Lessproductionissuesandreducedfieldreturns •Easytoselectrightpartsforfinetuningofdesigns
Potentialapplications
RecommendedforhardandsoftswitchingflybacktopologiesforLED Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand Industrialpower.AlsosuitableforPFCstageinConsumerapplications andSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C
800
V
RDS(on),max
1.4
Ω
Qg,typ
10
nC
ID 4 A
Eoss @ 500V
0.9
µJ
VGS(th),typ
3
V
ESD class (HBM) 2
-
Type/OrderingCode IPD80R1K4P7
Package PG-TO 252-3
Marking 80R1K4P7
DPAK
tab
2 1
3 Drain
Pin 2, Tab Gate Pin 1
Source Pin 3
RelatedLinks see Appendix A
Final Data Sheet
1 Rev.2.1,2018-02-09
800VCoolMOSªP7PowerTransistor
IPD80R1K4P7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2 Rev.2.1,2018-02-09
800VCoolMOSªP7PowerTransistor
IPD80R1K4P7
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
ID
Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness
ID,pulse EAS EAR IAR
dv/dt
Gate source voltage
VGS
Power dissipation Operating and storage temperature Continuous diode forward current Diode pulse current2) Reverse diode dv/dt3) Maximum diode commutation speed3)
Ptot Tj,Tstg IS IS,pulse dv/dt dif/dt
Min. -20 -30 -55 -
Values Typ. Max. -4 - 2.7 - 8.9 -8 - 0.07 - 0.6 - 100 - 20 - 30 - 32 - 150 - 3.0 - 8.9 -1 - 50
Unit Note/TestCondition
A
TC=25°C TC=100°C
A TC=25°C
mJ ID=0.6A; VDD=50V
mJ ID=0.6A; VDD=50V
A-
V/ns VDS=0to400V
V
static; AC (f>1 Hz)
W TC=25°C
°C -
A TC=25°C
A V/ns A/µs
TC=25°C VDS=0to400V,ISD<=0.7A,Tj=25°C VDS=0to400V,ISD<=0.7A,Tj=25°C
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case RthJC Thermal resistance, junction - ambient RthJA
Thermal resistance, junction for SMD version
- ambient
RthJA
Soldering temperature, wave- & reflow soldering allowed
Tsold
Min. -
-
Values Typ. Max. - 3.9 - 62
35 45
Unit Note/TestCondition
°C/W -
°C/W Device o.