IPA80R1K4P7

IPA80R1K4P7 MOSFET 800VCoolMOSªP7PowerDevice Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V superjunctiontechnologiesandcombinesbest-in-classperformancewith stateoftheartease-of-use,resultingfromInfineon’sover18years pioneeringsuperjunctiontechnologyinnovation. Features Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss Best-in-classDPAKRDS(on) Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V IntegratedZenerDiodeESDprotection Fullyqualifiedacc.JEDECforIndustrialApplications Fullyoptimizedportfolio Benefits Best-in-classperformance Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts Easytodriveandtoparallel BetterproductionyieldbyreducingESDrelatedfailures Lessproductionissuesandreducedfieldreturns Easytoselectrightpartsforfinetuningofdesigns Potentialapplications RecommendedforhardandsoftswitchingflybacktopologiesforLED Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand Industrialpower.AlsosuitableforPFCstageinConsumerapplications andSolar. Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C 800 V RDS(on),max 1.4 Ω Qg,typ 10 nC ID 4 A Eoss @ 50...