SPD08P06PG

SIPMOS® Power-Transistor Features P-Channel Enhancement mode Avalanche rated dv /dt rated 175°C operating temperature Pb-free lead finishing; RoHS compliant ° Qualified according to AEC Q101 SPD08P06P G Product Summary V DS R DS(on),max ID -60 V 0.3 Ω -8.8 A PG-TO252-3 Type Package SPD08P06PG PG-TO252-3 Tape and reel information 1000 pcs / reel Marking Lead free 08P06P Yes Packing Non dry Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=100 °C T A=25 °C Avalanche energy, single pulse E AS I D=8.83 A, R GS=25 Ω Avalanche energy, periodic limited by Tjmax E AR Reverse diode dv /dt dv /dt I D=8.83 A, V DS=48 V, di /dt =-200 A/µs, T j,max=175 °C Gate source voltage Power dissipation Operating and storage temperature ESD class V GS P tot T A=25 °C T j, T stg Soldering temperature IEC climatic category; DIN IEC 68-1 Value steady state -8.83 -6.25 -35.32 70 4.2 -6 ±20 42 "-55 ....