isc Silicon PNP Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·Designed for medium-speed switching and
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-10
A
PC
Collector Power Dissipation@TC=25℃ 150
W
TJ
Junction Temperature
-65~200 ℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.17 ℃/W
2N3790
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=-200mA; IB= 0
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB=- 0.4A
VBE(ON)-1 Base-Emitter On Voltage
IC=-5A; VCE=-2V
VBE(ON)-2 Base-Emitter On Voltage
IC=-10A; VCE=-4V
hFE-1
DC Current Gain
IC= -1A; VCE= -2V
hFE-2
DC Current Gain
IC= -3A; VCE= -2V
fT
Current Gain-Bandwidth Product
*:Pulse test:Pulse width=300us,duty cycle≤2%
IC= -0.5A; VCE= -10V; f= 1.0MHz
2N3790
MIN MAX UNIT
-80
V
-5
mA
-1.0
V
-2.0...