isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation.
APPLICATIONS ·Designed for medium-speed switching and
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
PC
Collector Power Dissipation@TC=25℃ 150
W
TJ
Junction Temperature
-65~200 ℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.17 ℃/W
2N3713
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA; IB= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC=5A; IB= 0.5A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 2V
hFE-1
DC Current Gain
IC= 1A; VCE= 2V
hFE-2
DC Current Gain
IC= 3A; VCE= 2V
fT
Current Gain-Bandwidth Product
*:Pulse test:Pulse width=300us,duty cycle≤2%
IC= 0.5A; VCE= 10V; f= 1.0MHz
2N3713
MIN MAX UNIT
60
V
5
mA
1.0
V
2.0
V
1.5
V
2...