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2N6289

Part Number	2N6289
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 20, 2016
Detailed Description	isc Silicon NPN Power Transistor 2N6289 DESCRIPTION ·DC Current Gain- : hFE = 30-150@ IC= 3A ·Collector-Emitter Sustai...
Datasheet	2N6289 PDF File

Overview

isc Silicon NPN Power Transistor 2N6289 DESCRIPTION ·DC Current Gain- : hFE = 30-150@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 30V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 40 W 150 ℃ Tstg Stora...

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