isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·The device employs the popular JEDEC TO-3 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·High voltage high current power
transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC PC TJ Tstg
Collector-Base Voltage
100
V
Collector-Emitter Voltage
80
V
Emitter-Base Voltage
8
V
Collector Current-Continuous
10
A
Collector Power Dissipation@TC=25℃ 150
W
Junction Temperature
200
℃
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.17 ℃/W
2N4576
isc website：www.iscsemi.com
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=30mA; IB= 0
ICEO
Collector Cutoff Current
VCE=80V;IB= 0
IEBO
Emitter Cutoff Current
VEB=8V; IC= 0
hFE
DC Current Gain
*:Pulse test:Pulse width=300us,duty cycle≤2%
IC=4A; VCE= 4V
2N4576
MIN MAX UNIT
80
V
1
mA
0.1 mA
50 150
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products ar...
