2N4395

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·The device employs the popular JEDEC TO-3 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage 60 V Collector-Emitter Voltage 40 V Emitter-Base Voltage 4 V Collector Current-Continuous 5 A Collector Power Dissipation@TC=25℃ 62 W Junction Temperature 150 ℃ Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2 ℃/W 2N4395 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=30mA; IB= 0 ICEO Collector Cutoff Current VCE=40V;IB= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain *:Pulse test:Pulse width=300us,duty cycle≤2% IC=2A; VCE= 1V 2N4395 MIN MAX UNIT 40 V 200 mA 0.1 mA 50 170 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are...