Document
BF720T1G, SBF720T1G, BF720T3G
NPN Silicon Transistor
Features
AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
http://onsemi.com
NPN SILICON TRANSISTOR SURFACE MOUNT
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage Collector −Base Voltage Collector −Emitter Voltage Emitter −Base Voltage Collector Current Total Power Dissipation up to TA = 25C Storage Temperature Range Junction Temperature THERMAL CHARACTERISTICS
VCEO VCBO VCER VEBO
IC PD Tstg TJ
300 Vdc 300 Vdc 300 Vdc 5.0 Vdc 100 mAdc 1.5 W −65 to +150 C 150 C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient (Note 1)
RqJA
C/W 83.3
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating.