BF721T1G

BF721T1G PNP Silicon Transistor Features  These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector -- Emitter Voltage Collector -- Base Voltage Collector -- Emitter Voltage Emitter -- Base Voltage Collector Current Total Power Dissipation up to TA = 25C (Note 1) VCEO VCBO VCER VEBO IC PD --300 --300 --300 --5.0 --50 1.5 Vdc Vdc Vdc Vdc mAdc W Storage Temperature Range Junction Temperature THERMAL CHARACTERISTICS Tstg --65 to +150 C TJ 150 C Characteristic Symbol Max Unit Thermal Resistance, Junction--to--Ambient (Note 1) RθJA 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.57...