M29W800DT

M29W800DT M29W800DB 8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory Features „ Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read „ Access times: 45, 70, 90 ns „ Programming time – 10 μs per byte/word typical „ 19 memory blocks – 1 boot block (top or bottom location) – 2 parameter and 16 main blocks „ Program/erase controller – Embedded byte/word program algorithms „ Erase suspend and resume modes – Read and program another block during erase suspend „ Unlock bypass program command – Faster production/batch programming „ Temporary block unprotection mode „ Common flash interface – 64-bit security code „ Low power consumption – Standby and automatic standby „ 100,000 program/erase cycles per block „ Electronic signature – Manufacturer code: 0020h – Top device code M29W800DT: 22D7h – Bottom device code M29W800DB: 225Bh SO44 (M) TSOP48 (N) 12 x 20 mm FBGA TFBGA48 (ZE) 6 x 8 mm April 2009 Rev 11 1/52 www.num...