BUS23C

INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification BUS23B/C DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUS23B 450V (Min)-BUS23C APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage(VBE= 0) BUS23B BUS23C 750 850 V VCEO Collector-Emitter Voltage BUS23B BUS23C 400 450 V VEBO IC ICM IBB IBM PC Tj Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range 9 15 30 6 9 175 150 -65~150 V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.7 ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN Power Transist...