BUL57

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL57 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.65V(Max) @ IC= 2A ·High Speed Switching APPLICATIONS ·Designed for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 8A ICM Collector Current-peak 16 A IB Base Current-Continuous 4A IBM Base Current-Peak PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 7 85 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.5 ℃/W Rth j-A Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & ...