Document
TIGER ELECTRONIC CO.,LTD
Product specification
HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR
BUL128D
■ NPN TRANSISTOR ■ HIGH VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED
■
APPLICATIONS
■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
■ FLYBACK AND FORWARD SINGLE
DESCRIPTION
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting
ABSOLUTE MAXIMUM RATINGS
Parameter
ol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
VCEO VEBO
IC IB Ptot Tj Tstg
Value Unit 700 V 400 V 9.0 V 4.0 A 2.0 A 70 W 150 .