BDY71X

isc Silicon NPN Power Transistor BDY71X DESCRIPTION ·Continuous Collector Current-IC= 4A ·Collector Power Dissipation- : PC= 29W @TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for accordance with the requirements of BS, CECC and JAN,JANTX, JANTXV and JANS specifications。 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEX Collector-Emitter Voltage VBE= -1.5V 90 V VCER Collector-Emitter Voltage RBE= 100Ω 60 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 29 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 6.0 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 4V ICEO Collector Cutoff Current ICEV Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 30V; IB= 0 VCE= 90V; VBE(off)= 1.5V VCE= 3...