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BDY55X
Silicon NPN Power Transistor
Description
isc Silicon
NPN
Power
Transistor
BDY55X DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-100@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ...
Inchange Semiconductor
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