DatasheetsPDF.com

BDY26C

Silicon NPN Power Transistor

Description

isc Silicon NPN Power Transistor BDY26C DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF signal powe amplifier applications. AB...

Inchange Semiconductor

Download BDY26C Datasheet

Similar Datasheet

BDY20 Bipolar NPN Device - Seme LAB
BDY20 Silicon NPN Power Transistor - Inchange Semiconductor
BDY23 (BDY23 - BDY25)NPN SILICON TRANSISTORS - Comset Semiconductor
BDY23 Bipolar NPN Device - Seme LAB
BDY23 Silicon NPN Power Transistor - Inchange Semiconductor
BDY23A Bipolar NPN Device - Seme LAB
BDY23B Bipolar NPN Device - Seme LAB
BDY23C Bipolar NPN Device - Seme LAB
BDY24 (BDY23 - BDY25)NPN SILICON TRANSISTORS - Comset Semiconductor
BDY24 Silicon NPN Power Transistor - Inchange Semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)