isc Silicon NPN Power Transistor
DESCRIPTION ·DC Current Gain- hFE= 20~200@ IC= 4A ·Collector-Emitter Sustaining Voltag...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·DC Current Gain- hFE= 20~200@ IC= 4A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)- BDT91F; 80V(Min)- BDT93F; 100V(Min)- BDT95F
·Complement to Type BDT92F/94F/96F ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio output stages and general
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDT91F
60
VCBO
Collector-Base Voltage BDT93F
80
BDT95F
100
VCEO
Collector-Emitter Voltage
BDT91F
60
BDT93F
80
BDT95F
100
VEBO
Emitter-Base Voltage
7
IC
Collector Current-Continuous
10
ICM
Collector Current-Peak
20
IB
Base Current-Continuous
4
PC
Collector Power Dissipation @ TC=25℃
32
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 6.4 ℃/W
BDT91F/93F/95F
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isc Silicon
NPN Power
Transistor
BDT91F/93F/95F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDT91F BDT93F IC= 30mA ; IB= 0 BDT95F
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A
VBE(on) ICBO ICEO
Base-Emitter On Voltage Collector Cu...