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BDS19

Silicon PNP Power Transistor

Description

isc Silicon PNP Power Transistor BDS19 DESCRIPTION ·High Voltage: VCEV= -150V(Min) ·Low Saturation Voltage- : VCE(sat)= -1.5V(Max)@ IC= -4A ·High Reliablity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power linear and switching application and General puepose power. ABSOLUTE MAXIMUM RATING...

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