CDBN00340

SMD Schottky Barrier Diode COMCHIP www.comchip.com.tw CDBN00340 Io = 30mA V R = 40 Volt s Features Designed for mounting on small surface Extremely thin package Low stored charge Majority carrier conduction 0.126(3.20) 0.118(3.00) 0.020(0.50) Typ. 1206 (3216) Mechanical data Case: 12063(3216)Standard package, molded plastic. Terminals: Solder plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band. Mounting position: Any. Weight: 0.0085 gram. (approximately) 0.010(R0.25) Typ. 0.063(1.60) 0.055(1.40) 0.043 (1.10) 0.035(0.90) Dimensions in inches and (millimeter) Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current, surge peak Power Dissipation Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit V RRM VR Io 45 40 30 500 200 -40 -40 +125 +125 V V mA mA mW C C 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) I FSM PD T STG Tj Electrical Characteristics ( at T A = 25 C unless otherwise noted ) Parameter Forward voltage Reverse current Reverse current Capacitance between terminals V R = 40 V V R = 30 V f = 1MHz, and 1 VDC reverse voltage Conditions I F = 1 mA DC Symbol Min Typ Max Unit VF IR IR CT 2 0.37 1.00 0.50 V uA uA pF RDS0208006-C Page 1 SMD Schottky Barrier Diode COMCHIP www.comchip.com.tw RATING AND CHARACTERISTIC CURVES (CDBN00340) Fig. 1 - Forward characteristics 10m 100u Fig...