Memory FRAM
FUJITSU SEMICONDUCTOR DATA SHEET
Memory FRAM
4 M Bit (512 K × 8)
MB85R4001A
DS501-00005-5v1-E
■ DESCRIPTIONS
The MB85R...
Description
FUJITSU SEMICONDUCTOR DATA SHEET
Memory FRAM
4 M Bit (512 K × 8)
MB85R4001A
DS501-00005-5v1-E
■ DESCRIPTIONS
The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies.
The MB85R4001A is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R4001A can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
The MB85R4001A uses a pseudo-SRAM interface.
■ FEATURES
Bit configuration
: 524,288 words × 8 bits
Read/write endurance
: 1010 times / byte
Data retention
: 10 years ( + 55 °C), 55 years ( + 35 °C)
Operating power supply voltage
: 3.0 V to 3.6 V
Low power operation
: Operating power supply current 15 mA (Typ)
Standby current 50 μA (T...
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