SMD Schottky Barrier Diode
COMCHIP
www.comchip.com.tw
CDBF0130
Io = 100 mA V R = 30 Volt s Features
(Lead-free Device...
SMD
Schottky Barrier Diode
COMCHIP
www.comchip.com.tw
CDBF0130
Io = 100 mA V R = 30 Volt s Features
(Lead-free Device)
Designed for mounting on small surface. Extremely thin/leadless package. Low drop-down voltage. Majority carrier conduction.
0.051(1.30) 0.043(1.10)
1005(2512)
0.102(2.60) 0.095(2.40)
Mechanical data
Case: 1005 (2512) Standard package , molded plastic.
0.014(0.35) Typ. 0.035 (0.90) 0.027 (0.70)
Terminals: Gold plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band.
0.012 (0.30) Typ.
Mounting position: Any.
0.014(0.35) Typ.
Weight: 0.006 gram (approximately).
Dimensions in inches and (millimeter)
Maximum Rating ( at T A = 25 C unless otherwise noted )
Parameter
Repetitive peak reverse voltage Reverse voltage Average forward current Forward current , surge peak Power Dissipation Storage temperature Junction temperature 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method )
Conditions
Symbol Min Typ Max Unit
V RRM VR Io I FSM PD T STG Tj -40 -40 1000 250 +125 +125 35 30 100 V V mA mA mW C C
Electrical Characteristics ( at T A = 25 C unless otherwise noted )
Parameter
Forward voltage Reverse current Capacitance between terminals V R = 30 V f = 1MHz, and 10 VDC reverse voltage
Conditions
I F = 100 mA DC
Symbol Min Typ Max Unit
VF IR CT 9 0.44 30 V uA pF
RDS0212003-B
Page 1
SMD
Schottky Barrier Diode
COMCHIP
www.comchip.com.tw
RATING AND CHARACTERISTIC CURVES (CDBF0130)
Fig. 1 - Forward characteri...
