FDMC3612

FDMC3612 N-Channel PowerTrench® MOSFET FDMC3612 N-Channel Power Trench® MOSFET 100 V, 12 A, 110 mΩ February 2012 Features General Description „ Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A „ Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A „ Low Profile - 1 mm max in Power 33 „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications „ DC - DC Conversion „ PSE Switch Top 8765 Bottom DDD D 1 234 GS S S MLP 3.3x3.3 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dis...