MJW18020

isc Silicon NPN Power Transistors DESCRIPTION ·High Voltage Capability Fast and Very Tight Switching Times Parameters tsi and tfi High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor MJW18020 APPLICATIONS Designed for motor control applications, high power supplies and UPS’s for which the high reproducibility of DC and Switching parameters minimizes the dead time in bridge configurations ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 480 V VEBO Emitter-Base Voltage 9.0 V IC Collector Current-Continuous 30 A ICM Collector Current-Peak 45 A IB Base Current-Continuous 6.0 A PC Collector Power Dissipation@TC=25℃ 250 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.5 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor MJW18020 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 2.0A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 4.0A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 10A; IB= 2.0A VBE(sat)-2 Base-Emitter ...