isc Silicon NPN Power Transistor
INCHANGE Semiconductor
MJL21194G
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 250V(Min) High DC Current Gain – hFE = 25 Min @ IC = 8 Adc ·Complement to Type MJL21193 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS Perforated Emitter technology
high powe...