INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
MJH11020
DESCRIPTION ·Hig...
INCHANGE Semiconductor
isc Silicon
NPN Darlington Power
Transistor
isc Product Specification
MJH11020
DESCRIPTION ·High DC Current Gain-
: hFE = 400(Min)@ IC= 10A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.5V(Max)@ IC= 10A = 4.0V(Max)@ IC= 15A
·Complement to Type MJH11019
APPLICATIONS ·Designed for general purpose amplifiers ,low frequency
switching and motor control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
200
VCEO
Collector-Emitter Voltage
200
VEBO
Emitter-Base Voltage
5
IC Collector Current-Continuous
15
ICM Collector Current-Peak
30
IB Base Current- Continuous
PC
Collector Power Dissipation @TC=25℃
Tj Junction Temperature
0.5 150 150
Tstg Storage Temperature Range
-65~150
UNIT V V V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W
isc w...