isc Silicon NPN Power Transistor
MJE521
DESCRIPTION ·Collector–Emitter Sustaining Voltage-
: VCEO(SUS) = 40 V(Min) ·DC...
isc Silicon
NPN Power
Transistor
MJE521
DESCRIPTION ·Collector–Emitter Sustaining Voltage-
: VCEO(SUS) = 40 V(Min) ·DC Current Gain-
: hFE = 40(Min) @ IC= 1A ·Complement to Type MJE371 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general−purpose amplifier and
switching circuits applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation TC=25℃
Ti
Junction Temperature
2
A
40
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 3.12 ℃/W
isc Website:www.iscsemi.com
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
ICBO
Collector Cutoff Current
VCB= 30V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 1 A ; VCE= 1V
MJE521
MIN MAX UNIT
40
V
0.1
mA
0.1
mA
40
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is present...