MJE350

isc Silicon PNP Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·DC Current Gain- : hFE = -100(Min) @ IC= -50mA ·Low Collector Saturation Voltage- : VCE(sat) = -1.0V(Max.)@ IC= -50mA ·Complement to the NPN MJE340 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -3 V IC Collector Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature -0.5 A 20 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 6.25 ℃/W MJE350 isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -1.0mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1.0mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1.0mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA ICBO Collector Cutoff Current VCB= -300V; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE DC Current Gain IC= -50m A ; VCE= -10V MJE350 MIN MAX ...