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MJE240

Part Number	MJE240
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 11, 2016
Detailed Description	isc Silicon NPN Power Transistor MJE240 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 80 V(Min) ·DC...
Datasheet	MJE240 PDF File

Overview

isc Silicon NPN Power Transistor MJE240 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 80 V(Min) ·DC Current Gain- : hFE = 40(Min) @ IC= 0.
2 A ·Low Collector Saturation Voltage- : VCE(sat) = 0.
3V(Max.
)@ IC= 0.
5 A ·Complement to the PNP MJE250 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low power audio amplifier and low-current, high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 80 VCEO Collector-Emitter Voltage 80 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 4 ICM Collector Current-Peak 8 IB Base Curren...

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