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MJE13003A

Part Number	MJE13003A
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 11, 2016
Detailed Description	isc Silicon NPN Power Transistor MJE13003A DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ...
Datasheet	MJE13003A PDF File

Overview

isc Silicon NPN Power Transistor MJE13003A DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.
) ·Collector Saturation Voltage : VCE(sat) = 1.
0(Max) @ IC= 1.
0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators, inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 4...

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