MJD50

isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 30~150@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated audio output amplifier,switchmode power supply drivers and other switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.0 A ICM Collector Current-Peak 2.0 A IB Base Current Collector Power Dissipation TC=25℃ PD Collector Power Dissipation Ta=25℃ Tj Junction Temperature 0.6 A 15 W 1.56 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 8.33 80 UNIT ℃/W ℃/W MJD50 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 10V ICEO Collector Cutoff Current VCE= 300V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 IC...