DatasheetsPDF.com

MJD47

Silicon NPN Power Transistor

Description

isc Silicon NPN Power Transistors INCHANGE Semiconductor MJD47 DESCRIPTION ·DC Current Gain -hFE = 30~150@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated audio output amplifier,switchmode power supply drivers...

Inchange Semiconductor

Download MJD47 Datasheet

Similar Datasheet

MJD112 Silicon NPN transistor - BLUE ROCKET ELECTRONICS
MJD112 Silicon NPN epitaxial planer Transistors - MCC
MJD112 Silicon NPN Power Transistor - Inchange Semiconductor
MJD112 NPN Silicon Darlington Transistor - Fairchild Semiconductor
MJD112 COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS - CDIL
MJD112 NPN Transistor - JCET
MJD112 Epitaxial Planar NPN Transistor - GME
MJD112 Complementary Darlington Power Transistor - ON Semiconductor
MJD112 NPN Transistor - MCC
MJD112 Complementary power Darlington transistor - STMicroelectronics

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)