DatasheetsPDF.com

MJD45H11

Silicon PNP Power Transistor

Description

isc Silicon PNP Power Transistors DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD44H11 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general pourpose power amplification and...

Inchange Semiconductor

Download MJD45H11 Datasheet

Similar Datasheet

MJD45H11 Silicon PNP Power Transistor - Inchange Semiconductor
MJD45H11 Complementary Power Transistors - Kexin
MJD45H11 PNP Epitaxial Silicon Transistor - Fairchild
MJD45H11 Complementary power transistors - ST Microelectronics
MJD45H11 SILICON POWER TRANSISTORS - Motorola
MJD45H11 8A PNP high power bipolar transistor - nexperia
MJD45H11 Complementary Power Transistors - ON Semiconductor
MJD45H11A 8A PNP high power bipolar transistor - nexperia
MJD45H11T4 Low voltage complementary power transistors - STMicroelectronics
MJD45H11T4-A (MJD44H11T4-A / MJD44H11T4-A) Complementary power transistors - ST Microelectronics

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)