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MJD41C

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Silicon NPN Power Transistor


Description
isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Complement to Type MJD42C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer a...



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MJD41C

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