MJD340

isc Silicon NPN Power Transistor INCHANGE Semiconductor MJD340 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 300 V(Min) ·Low Collector Saturation Voltage- : VCE(sat) = 1.0V(Max.)@ IC= 50mA ·DPAK for Surface Mount Applications ·Complement to Typ MJD350 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated audio output amplifier,switchmode power supply drivers and other switching applications.. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 3V IC Collector Current-Continuous 0.5 A ICM Collector Current-Peak Collector Power Dissipation PC TC=25℃ Collector Power Dissipation Ta=25℃ Ti Junction Temperature Tstg Storage Temperature Range 0.75 15 1.56 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,...